Structural, optical, and electrical analysis of tailoring Bi2-xSbxTe3 thin films
P. Chaiworna, S. Kaewjaa, E. Wongratb,c, C. Wichasilpa, A. Tubtimtaed,*
Chalcogenide Letters, Vol.21, No.5, pp. 423-429, 2024, DOI:10.15251/CL.2024.215.423
Abstract Bismuth antimony telluride (Bi2-xSbxTe3) thin films were synthesized using chemical bath
deposition (CBD) with various amounts of antimony. The structural, morphological, and
optical properties of Bi2-xSbxTe3 thin films have been scrutinized using X-ray diffraction
(XRD), field-emission scanning electron microscopy (FESEM), UV-Vis
spectrophotometry. A higher amount of Sb contents can be observed the Sb0.405Te0.595,
BiTe, and Bi4Te3 phases consisted in the pattern. Meanwhile, the energy band gaps are
tuned in the range of 2.95 to 3.30 eV. Finally, measurement of resistance with various
temperatures for activation energy (EAC) estimation was performed. The highest EAC value
was equal to 0.654 More >