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ARTICLE

Influence of the distance between evaporation source and substrate on formation of lead telluride (PbTe) nanostructures by vacuum thermal evaporation method

G. S. Amirbekova^a, Zh. K. Tolepov^a,*, N. Guseinov^a, M. A. Tulegenova^a, T. Kuanyshbekov^b

a Department of Physics and Technology , Al-Farabi Kazakh National University, Al-Farabi Avenue, 71, Almaty 050040 Kazakhstan
b National Scientific Laboratory of Collective Use S. Amonzholov East Kazakhstan University, 55 Kazakhstan str., Ust-Kamenogorsk 070002, Kazakhstan

* Corresponding Author:

Chalcogenide Letters 2024, 21(5), 431-437. https://doi.org/10.15251/CL.2024.215.431

Received 11 March 2024; Accepted 20 May 2024;

Abstract

Lead telluride nanostructures were obtained on silicon substrates by thermal evaporation in vacuum. Growth occurred at three different distances between the evaporation source and the substrate. The distances between the evaporator and the evaporation source were 5 cm; 7.5 cm and 10 cm. Structural characteristics were studied using XRD, SEM, EDX, AFM analyses. These methods provided information about the crystal structure, morphology, microstructure and elemental composition of the material. X-ray diffraction analysis showed that thin films of lead telluride obtained by thermal evaporation in vacuum have a cubic crystal structure. This experimental work was carried out to determine the effect of distance on the structure of lead telluride (PbTe). During the experiment, the optimal modes for the formation of lead telluride (PbTe) nanostructures were determined, which was equal to d = 10 cm. It was found that lead telluride (PbTe) nanostructures are formed at this distance.

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Keywords

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