Open Access

ARTICLE

Structural, optical, and electrical analysis of tailoring Bi_2-xSb_xTe₃ thin films

P. Chaiworn^a, S. Kaewja^a, E. Wongrat^b,c, C. Wichasilp^a, A. Tubtimtae^d,*

a Department of Physics, Faculty of Science and Technology, Chiang Mai Rajabhat University, Chiang Mai, 50300, Thailand
b School of Science, University of Phayao, Phayao, 56000, Thailand
c Unit of Excellence on Sensors Technology, University of Phayao, Phayao, 56000, Thailand
d Division of Physics, Department of Physical and Material Sciences, Faculty of Liberal Arts and Science, Kasetsart University Kamphaeng Saen Campus, Nakhon Pathom 73140, Thailand

* Corresponding Author:

Chalcogenide Letters 2024, 21(5), 423-429. https://doi.org/10.15251/CL.2024.215.423

Received 04 March 2024; Accepted 16 May 2024;

Abstract

Bismuth antimony telluride (Bi_2-xSb_xTe₃) thin films were synthesized using chemical bath deposition (CBD) with various amounts of antimony. The structural, morphological, and optical properties of Bi_2-xSb_xTe₃ thin films have been scrutinized using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), UV-Vis spectrophotometry. A higher amount of Sb contents can be observed the Sb_0.405Te_0.595, BiTe, and Bi₄Te₃ phases consisted in the pattern. Meanwhile, the energy band gaps are tuned in the range of 2.95 to 3.30 eV. Finally, measurement of resistance with various temperatures for activation energy (E_AC) estimation was performed. The highest E_AC value was equal to 0.654 eV for 0.8 g SbCl₃ as a precursor of Sb atom incorporated in the Bi₂Te₃ lattice.

---

Keywords

---