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S. John^a,b,*, M. Francis^b, A. P. Reena Mary^a, V. Geetha^a
Chalcogenide Letters, Vol.20, No.5, pp. 315-323, 2023, DOI:10.15251/CL.2023.205.315
Abstract Thin films of SnS were deposited chemically, and they are annealed at four different temperatures: 100 °C, 150 °C, 200 °C, and 250 °C. X-ray diffraction, Raman analysis, UV-visible spectroscopy, field emission scanning electron microscopy, and energy dispersive spectroscopy were used to investigate the impact of annealing temperature on the structural, optical, morphological, and chemical properties of thin films. As the annealing temperature rose, it was seen from the XRD patterns that the crystallinity of SnS films improved. At 250 °C, the film was almost evaporated, and the XRD pattern showed no peaks at all.… More >

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H. A. Mohamed^a, Sh. S. Ali^a, M. R. Ahmed^a, W. S. Mohamed^b,c,*
Chalcogenide Letters, Vol.20, No.5, pp. 333-342, 2023, DOI:10.15251/CL.2023.205.333
Abstract This study focuses on thin-film structures made of ITO, CdS, ZnS, CZTSSe, and Mo (i.e., ITO/CdS:ZnS/CZTSSe/Mo) for solar cell applications. The effect of ZnS content on the performance of this cell has been theoretically investigated. The optical losses caused by reflection at various interfaces and absorption in ITO and CdS:ZnS layers have been calculated using the current structure's experimental data. The losses due to charge carrier recombination at the front and back surfaces of the CZTSSe absorber have been calculated using the absorber layer and depletion region parameters. It was discovered that increasing the ZnS More >

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N. V. Urusova^a,*, A. I. Merentsov^b,c, E. A. Stepanova^a,c, O. G. Reznitskikh^a
Chalcogenide Letters, Vol.20, No.5, pp. 343-351, 2023, DOI:10.15251/CL.2023.205.343
Abstract Co_xTiS₂ (x = 0.20, 0.30, 0.50, 0.75) compounds have a layered crystal structure with Ti atoms surrounded by the S octahedrons in the S-Ti-S layers and Co ions which could be surrounded both by the S octahedrons and tetrahedrons. The features of the crystal structure and magnetic properties of the polycrystalline Co_xTiS₂ samples were studied as a function of the cobalt concentration using X-ray diffraction and magnetization measurements. The disordered state of the Co atoms (x < 0.20) changes to the ordered one (x ≥ 0.20). The magnetic ordering arises at x = 0.20 with mostly More >

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P. Yadav^a, C. Tyagi^b,*, A. Devi^c, N. Gahlot^d
Chalcogenide Letters, Vol.20, No.5, pp. 353-365, 2023, DOI:10.15251/CL.2023.205.353
Abstract The present work reports the influence of selenium replacement by bismuth on the nonlinear optical parameters of ternary Se_85-xTe₁₅Bi_x (x=0, 1, 2, 3, 4, 5 atomic %) chalcogenide thin films. Calculation of nonlinear refractive index (n_{2>/sub>), two-photon absorption coefficient (β2>/sub>) and third-order susceptibility (χ ⁽³⁾ ) by well known Z-scan technique with femtosecond laser pulses were done. The Z-scan spectra for Se85-xTe15Bix upto Bi= 4 atomic % results in self- focusing behavior of n2>/sub> is positive while for Bi=5 atomic % n2>/sub> is negative. The behavior of n2>/sub> by using different physical parameters are exlpained. The comparison of experimental} More >

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A. J. Jarjees Alsoofy^a, R. S. Ali^b,*, Z. S. A. Mosa^c, N. F. Habubi^d, S. S. Chiad^e
Chalcogenide Letters, Vol.20, No.5, pp. 367-376, 2023, DOI:10.15251/CL.2023.205.367
Abstract Thermal evaporation was used to prepare nickel (Ni) doped cadmium selenide thin films in different proportions (0, 1 and 3) wt.% on glass substrates at room temperature. According to XRD examination, all films possessed a polycrystalline hexagonal structure, with the (002) plane as the ideal orientation. According to AFM analysis, the average particle size decreases as the amount of doping increases, showing that the distribution of grains has become more uniform. The transmission and distortion ratios of the films were measured to learn more about their optical properties, which revealed that the (CdSe) films' transmittance More >

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A. Gahtar^a,*, C. Zaouche^b, A. Ammari^c,d, L. Dahbi^e
Chalcogenide Letters, Vol.20, No.5, pp. 377-385, 2023, DOI:10.15251/CL.2023.205.377
Abstract In this work, the bimetallic (Ni,Co) sulfide film of 852.213 nm thickness was successfully deposited using the spray pyrolysis technique at 300 °C. The compound was prepared with a mixture of nickel acetate (C₄H₆O₄Ni. 4H₂O), cobalt chloride (CoCl₂. 6H₂O), and thiourea (CS(NH₂)₂) as precursors for Ni, Co, and S, respectively. The temperature and sedimentation time were 300 °C and 10 min, respectively; the film was then, characterized without any thermal post-treatment. The structural, morphological, optical and electrical analysis were carried out to investigate the different properties of the material. The X-ray diffraction analysis confirmed the presence of NiCo₂S₄… More >

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M. Iovu^a, I. Culea^a, V. Verlan^a, Olga Bordian^a, M. Enachescu^b,d, A. A. Popescu^c,*, D. Savastru^c, A. Lazar^d
Chalcogenide Letters, Vol.20, No.5, pp. 387-392, 2023, DOI:10.15251/CL.2023.205.387
Abstract The amorphous calcogenide semiconductor As_0.63S_2.70Sb_1.37Te_0.30 was synthesized and thin films based on it were obtained. XRD and optical images investigations showed the amorphous and homogeneous nature of the samples. The optical transmission spectrum in the UV-Vis range of As_0.63S_2.70Sb_1.37Te_0.30 thin films shows good transparency in the spectral range 0.7-3.5 µm with a single absorption threshold at 2.05 eV and with refractive index in infrared 2.3. The irradiation of films with light leads to a parallel shift of the transmission spectrum to the IR range. The materials with As_0.63S_2.70Sb_1.37Te_0.30 composition have high optical transparency have high optical transparency More >

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