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C. B. Cui^a,b, G. C. Yang^b, Z. Zhang^a,, X. J. Wang^c,
Chalcogenide Letters, Vol.22, No.6, pp. 507-520, 2025, DOI:10.15251/CL.2025.226.507
Abstract This research introduces an innovative aptasensor for detecting alpha-fetoprotein with exceptional sensitivity and specificity, employing a novel MoS₂/Fe₃O₄ composite fabricated through an advanced in-situ growth methodology. The composite exhibited a hierarchical flower-like structure with uniformly distributed Fe3O4 nanoparticles, confirmed by SEM, XRD, and Raman spectroscopy. The MoS₂/Fe₃O₄ composite demonstrated a 66% increase in surface area (7.16 m^²/g) compared to pristine MoS2, enhancing aptamer immobilization and electron transfer efficiency. Electrochemical characterization revealed a significant increase in interfacial resistance upon AFP binding, with a detection limit of 0.3 pg/mL and a dual linear range of 0.001–0.1 ng/mL and 0.1–100 More >

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D. M. A. Latiff, B. A. Ahmed, S. M. Ali, K. A. Jasim^*
Chalcogenide Letters, Vol.22, No.6, pp. 521-528, 2025, DOI:10.15251/CL.2025.226.521
Abstract In this paper, the effect of sulfur substitution by arsenic on the structural, optical properties of thin films of the trivalent chalcogenide Se₆₆S_44-xAs_x at different concentrations (where x = 0, 8, 16, and 24 at %) was studied. Thin films with a thickness of (300±10 nm) were prepared using thermal evaporation of bulk samples. Structural examinations were performed using XRD and AFM techniques. All the studied film samples were amorphous in structure and the intensity of the crystalline parts was high in the range of 10-40. Also, in Atomic Force Microscopy (AFM). It was found that… More >

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T. J. Li^a,*, Y. Yue^a, L. P. Qu^a, H. J. Hou^b, S. H. Fan^b, H. L. Guo^c
Chalcogenide Letters, Vol.22, No.6, pp. 529-540, 2025, DOI:10.15251/CL.2025.226.529
Abstract This work uses the theoretical method to calculates and analyzes a series of properties of the crystal such as electronic structure, optical properties, and elastic constants. The results show that the optimized structural parameters of the CuInSe₂ is close to the experimental values. The analysis of various parameters of optical properties shows that the crystal is transparent for incident light with energy greater than 25 eV. Furthermore, the calculation of elastic constants reveals that CuInSe₂ exhibits significant anisotropy and possesses excellent ductility. More >

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H. K. Hassun^a,*, B. H. Hussein^a, B. K. H. Al-Maiyaly^a, R. H. Athab^a, Y. K. H. Moussa^b
Chalcogenide Letters, Vol.22, No.6, pp. 541-550, 2025, DOI:10.15251/CL.2025.226.541
Abstract Photoconductive possessions through the highly sensitive and responsive in lower applications apply voltages with a charge that effect the product for the photodetector utilizing Copper Sulfide was effective to fabricate and deposit by the means of thermal evaporation techniques following by the heat treatment with applications as the visible photodetector was described. Effects of doping to the antimony and aluminum on photo detectors property were estimated to be below illumination by the utilization of different power densities. The structure with the surface morphology properties was studied by XRD and AFM techniques, a clear effect of More >

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M. H. Ibrahim^*, M. R. Salim, M. Y. Mohd Nor, A. S. Abdullah, A. I. Azmi
Chalcogenide Letters, Vol.22, No.6, pp. 551-560, 2025, DOI:10.15251/CL.2025.226.551
Abstract Four chalcogenide compounds: copper zinc germanium sulfide (CZGS), copper zinc germanium selenide (CZGSe), copper barium tin sulfide (CBTS), and copper manganese tin sulfide (CMTS) were proposed as hole transport layer (HTL) in dye-sensitized solar cell (DSSC). The DSSC structure comprises fluorine-doped tin oxide (FTO) as the top electrode, zinc oxysulfide (ZnOS) as the electron transport layer (ETL), N719 dye as the light absorber, chalcogenides as the HTL, and gold (Au) as the back electrode. By utilizing the SCAPS 1- D simulator, the optimal thicknesses for ZnOS, HTL candidates and N719 dye were determined to be More >

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