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H. K. Mahmood^*, B. H. Hussein
Chalcogenide Letters, Vol.21, No.9, pp. 687-694, 2024, DOI:10.15251/CL.2024.219.687
Abstract ZnIn₂(Se_1-xTe_x)₄ (ZIST) chalcopyrite semiconductor thin films at various contents (x = 0.0, 0.2, and 0.4) are deposited on glass and p type silicon (111) substrate to produce heterojunction solar cell by using the thermal evaporation technique at RT where the thickness of 500 nm with a vacuum of 1×10^-5 mbar and a deposited rates of 5.1 nm/s. This study focuses on how differing x content effect on the factors affecting the solar cell characteristics of ZIST thin film and n-ZIST/p-Si heterojunction. X-ray diffraction XRD investigation shows that this structure of ZIST film is polycrystalline and tetragonal,… More >

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M. Zanib^a, M. A. Yasir^a, N. A. Noor^a,*, S. Mumtaz^b, Mohammad K. Al-Sadoon^c
Chalcogenide Letters, Vol.21, No.9, pp. 695-705, 2024, DOI:10.15251/CL.2024.219.695
Abstract DFT approach was employed to examine the mechanical and optoelectronic properties of CdCe₂X₄ (X = S, Se) for investigating their fundamental attributes leading to the FM semiconducting capabilities. In this letter, we computed the precise spin-polarized electrical characteristics using mBJ potential and evaluated the physical and mechanical features via PBEsol-GGA functional. The materials' brittleness has been disclosed by the obtained elastic parameters and related components. According to the analysis of band structure configuration and density of states plots, the aforementioned composites are accounted to be the most durable. In the FM phase, these compounds’ durability is… More >

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T. M. Ilyas^a, F. M. Sadigov^a, N. Sh. Mammadova^a, Y. I. Aliyev^b,c, R. E. Huseynov^d,*
Chalcogenide Letters, Vol.21, No.9, pp. 707-717, 2024, DOI:10.15251/CL.2024.219.707
Abstract The Ho-Bi-Te ternary system was studied by DTA, X-ray diffraction, and MSA, as well as by measuring microhardness and determining density, congruent triangulation scheme and projection of the liquidus surface, types and coordinates of mono- and invariant equilibria. It is established that this system is triangulated into five pseudo-ternary systems. It was discovered that an incongruently melting ternary compound containing HoBiTe₃ is formed in the Ho-Bi-Te ternary system. X-ray phase analysis established that the HoBiTe₃ compound crystallises in a tetragonal system with lattice parameters: a = 19.99, с = 13.82 Å, Z = 3. Studying the More >

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Y. B. Kishore Kumar^a, S. Guru Prasad^b, A. S. Swapna Smitha^c, U. Chalapathi^d,*, G. Suresh Babu^c, Y. Jayasree^e, P. Uday Bhaskar^f, Si-Hyun Park^d
Chalcogenide Letters, Vol.21, No.9, pp. 719-727, 2024
Abstract This study explores the ternary compound semiconductor as a potential absorber layer for third-generation solar cells. CuSbS₂, a promising candidate for thin film absorber layers, is fabricated using a simple spray pyrolysis method. The research specifically investigates the influence of two different carrier gases during the fabrication process. X-ray diffraction as well as Raman studies confirm that the films exhibit a chalcostibite structure. Notably, films fabricated with nitrogen as the carrier gas demonstrate enhanced crystallinity, accompanied by reduced microstrain and dislocation density. Furthermore, these films exhibit a significantly improved absorption coefficient, reaching 10⁵ cm^-1 . Optical studies More >

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N. G. Basil Ralph^a, S. Shanmugha Soundare^b, D. Yamuna^a, S. Ariponnammal^a,*
Chalcogenide Letters, Vol.21, No.9, pp. 729-746, 2024, DOI:10.15251/CL.2024.219.729
Abstract Nanocomposite SnSeO₃/ZnSeO₃ has been synthesized by hydrothermal method. X-ray powder diffraction confirms formation of SnSeO₃/ZnSeO₃ nanocomposite. It exhibits an interesting morphology of needle like nanorod structure. Thermal analysis reveals the thermal stability, decomposition behavior and critical temperatures where significant weight loss occurs. X-ray photoemission explains the role of the chemical state Sn, Zn, Se and O in SnSeO₃/ZnSeO₃. Electrochemical study has been made in both three electrode and two electrode system. In three electrode system, cyclic voltammetry exhibits a bell-shaped curve and the operational potential window is 0.8 V. The specific capacitance is 78.65 F/g for 5… More >

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R. Selva^a, I. Devadoss^b,*, A. Krishnamoorthy^b, S. P. Sheeba^b
Chalcogenide Letters, Vol.21, No.9, pp. 747-755, 2024, DOI:10.15251/CL.2024.219.747
Abstract Pure ZnS and Zn_1-xCr_xS nanoparticles were successfully prepared using the coprecipitation method, where x represents the concentration (x = 0.00, 0.10, and 0.05). There are many analytical methods used, such as X-ray diffraction (XRD), scanning electron microscopy (SEM), and Spectroscopy of energy dispersive (EDS). The magnetism structure of the catalysts was investigated using spectrophotometry (VSM), thermogravimetric analysis (TGA), and differential thermal analysis (DTA). X-ray diffraction studies determine the nanocrystal arrangement and size of microcrystals. As seen in SEM analysis, the particles are agglomerated. The coordination of sulfur ions around zinc ions was examined using FTIR analysis.… More >

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M. Sudha^a,*, A. B. Madhan^b, M. Revathi^c, N. Thangaraj^d
Chalcogenide Letters, Vol.21, No.9, pp. 757-764, 2024, DOI:10.15251/CL.2024.219.757
Abstract An inexpensive spray pyrolysis process has been used to create thin layer of tin disulphide. The concentration, flow rate, and nozzle to substrate distance were tuned as deposition parameters to produce high-quality thin films. Temperature is varied in the range 200˚C to 350˚C. Through physical research, properties such as the structural, electrical and optical were examined. The films generated are SnS2 with a hexagonal structure, as revealed by X-ray diffraction. EDAX analysis confirms SnS2 thin films. Scanning electron microscopy indicated uniform stacking and material adherence to the glass substrate. A 2.22 eV straight band gap More >

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