Open Access

ARTICLE

Growth and characterization of tin disulphide thin film by spray pyrolysis technique

M. Sudha^a,*, A. B. Madhan^b, M. Revathi^c, N. Thangaraj^d

a Department of Physics, Sengunthar Engineering College, Tiruchengode, Tamil Nadu, India
b Department of Mechanical Engineering, Dr.Navalar Nedunchezhiyan college of Engineering, Tholudur, Tamil Nadu, India
c Department of Physics, Excel Engineering College, Komarapalayam, Tamil Nadu, India
d Department of Physics, Velalar College of Engineering and Technology, Erode, Tamil Nadu, India

* Corresponding Author:

Chalcogenide Letters 2024, 21(9), 757-764. https://doi.org/10.15251/CL.2024.219.757

Received 29 May 2024; Accepted 20 September 2024;

Abstract

An inexpensive spray pyrolysis process has been used to create thin layer of tin disulphide. The concentration, flow rate, and nozzle to substrate distance were tuned as deposition parameters to produce high-quality thin films. Temperature is varied in the range 200˚C to 350˚C. Through physical research, properties such as the structural, electrical and optical were examined. The films generated are SnS2 with a hexagonal structure, as revealed by X-ray diffraction. EDAX analysis confirms SnS2 thin films. Scanning electron microscopy indicated uniform stacking and material adherence to the glass substrate. A 2.22 eV straight band gap was found. Two peaks in the photoluminescence spectrum were indicative of the emission of green and yellow fluorescence, respectively. Electrical properties reveal that resistivity decreases from 3.18 x 10^-2 Ω cm to 3.06 x 10^-3 Ω cm, carrier concentration & mobility increases to 1.4 x 10²⁰ / cm³ to 1.8 x 10²⁰ / cm³ , 1.92 cm² /Vs to 5.3 cm² /Vs respectively with increases in temperature.

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Keywords

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