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M. N. Abdel-Salam^a, N. Sabry^b, E. S. Yousef^c,d, E. R. Shaaban^a,*
Chalcogenide Letters, Vol.20, No.11, pp. 759-777, 2023, DOI:10.15251/CL.2023.2011.759
Abstract This study focused to prepare poly-crystalline (ZnSe)_1-xCu_x thin films, where x values vary from 0 to 0.1 %. the effect of Cu ratios dopant on structural, phases and optical properties has been investigated. As prepared thin films were deposited onto a cleaning glass substrate under high vacuum conditions (10^-7 mbr) at room temperature using the “ evaporation technique”. The analysis results according to data of the X-ray diffraction technique of all films refer to the growth polycrystalline with hexagonal wurtzite structure of Zn-Se with no presence of any further phases. The changes in numerous parameters such… More >

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P. Sateesh^a,*, A. Raveendra^b,*, M. Ashok^c, S. S. Sivaraju^d, K. Umadevi^e, N. Rajeswaran^f
Chalcogenide Letters, Vol.20, No.11, pp. 779-787, 2023, DOI:10.15251/CL.2023.2011.779
Abstract In the present work, SnS thin films were prepared using the CBD technique at room temperature and varying annealing temperaturesfrom300 to 450 °C for photo detector applications. The prepared samples were characterized using different techniques for analyzing the structural, optical, morphological, and photo sensing properties of the samples. From XRD analysis, the diffraction pattern of all the prepared thin films shows the pristine SnS phase of the samples possessing an orthorhombic phase without the presence of any impurity phases. Among the fabricated thin films, the SnS thin film annealed at a temperature of 350 °C… More >

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K. A. Mohammed^a,*, R. A. Talib^b, B. Bhavani^c, N. H. J. Al Hasan^d, A. Kareem^e, F. H. Alsultany^f, R. S. Zabibah^g, M. A. Alkhafaji^h, S. Sharma^i,j
Chalcogenide Letters, Vol.20, No.11, pp. 789-796, 2023, DOI:10.15251/CL.2023.2011.789
Abstract CdZnS thin films created via chemical bath deposition were examined to see how Cu doping affected their characteristics. Cu ions were added to the films in order to change their optical, structural, and morphological characteristics. These findings suggest that Cu doping can be used to modify the optical characteristics of CdZnS thin films. By using Xray diffraction (XRD) and the energy dispersive analysis of X-ray method (EDAX), we were able to investigate the compositional ratio as well as the structural features of the films. The field emission scanning electron microscopy (FESEM) technique was utilized in More >

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U. Chalapathi^a, P. R. Prasad^b, C. P. Reddy^c, S. Sambasivam^d, P. Rosaiah^e, M. Ouladsmane^f, S. Alhammadi^g, S. M. Lee^a, S. H. Park^a,*
Chalcogenide Letters, Vol.20, No.11, pp. 797-802, 2023, DOI:10.15251/CL.2023.2011.797
Abstract Wittichenite Cu₃BiS₃ thin films have received significant interest as light harvesters owing to their suitable optoelectronic properties and presence of earth-abundant, and non-toxic elements. We have synthesized Cu₃BiS₃ thin films by a two-stage process; in which, Cu/Bi/Cu metallic stacks were thermally evaporated and then sulfurized at 400℃ for 10–60 min in a quartz tubular furnace. The influence of sulfurization time on the structural, microstructural, compositional, optical, and electrical properties of the films was investigated. The results revealed that the films were orthorhombic Cu₃BiS₃ with the following lattice parameters: a = 0.768 nm; b = 1.043 nm; and More >

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A. Chirita^a,*, A. Hustuc^b, N. Nasedchina^a, S. Vatavu^a
Chalcogenide Letters, Vol.20, No.11, pp. 803-809, 2023, DOI:10.15251/CL.2023.2011.803
Abstract The polymer/67at %(As₂S₃)_0.985(Bi₂Se₃)_0.015:33 at.% As₂Se₃ structure for X-ray imaging has been investigated. The possibility of registering relief-phase images for radiation of “white” spectrum of tungsten anode X-ray tube was shown. More >

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S. Petrosyan^a,*, A. Musayelyan^a, E. Zaretskaya^b, V. Gremenok^b,c, K. Buskis^b, A. Stanchik^b,c
Chalcogenide Letters, Vol.20, No.11, pp. 811-820, 2023, DOI:10.15251/CL.2023.2011.811
Abstract We present the results of the study of the microstructure, X-ray diffraction and Raman scattering spectra of Cu₂SnS₃ (CTS) films synthesized at 500℃ by the sulfurization of SnCu stacked metal precursors with different annealing time. The results indicate that sulfurization time has a great influence on both composition and morphology of the film. It is shown that the process of formation of a single-phase CTS compound with a monoclinic structure and composition close to stoichiometry is completed for a synthesis time of 60 - 80 min. With an increase in the time of synthesis to 120 More >

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L. R. Singh^a,*, R. K. L. Singh^b, M. A. Hussain^c
Chalcogenide Letters, Vol.20, No.11, pp. 821-828, 2023, DOI:10.15251/CL.2023.2011.821
Abstract Mn doped nanocrystalline PbS thin films were deposited onto glass substrates by chemical bath deposition (CBD) method. All the deposited thin films were found to be crystalline having cubic phase structure. The optical properties of the Mn doped nanocrystalline PbS thin films have been studied. They have high absorbance in the UV-visible region. The linear nature of (αhν)² vs (hν) plots of PbS thin films confirmed that the transition is direct and the optical band gap energy of PbS films is found to increase from 1.90 eV to 2.28 eV with decreasing crystallite size from 21 More >

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S. W. Xu^*, T. W. Liang
Chalcogenide Letters, Vol.20, No.11, pp. 829-835, 2023, DOI:10.15251/CL.2023.2011.829
Abstract We investigated the effect of the elemental substitution of As by Sb on the threshold behaviours in Ge_xSb₁₀Se_90-x glasses. We found that, while the transition thresholds at MCN=2.4 and 2.67 were verified in the GeAsSe glasses, the transition thresholds can be changed to chemically stoichiometric compositions if As is substituted by Sb. We further deconvolved Raman spectra into different structural units and the change of their respective intensity showed the same behaviour, and this was ascribed to the chemical effect induced by a large difference of the atomic radius between As and Sb, and a relatively More >

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T. A. Chowdhury^*, S. M. T. Hossain, M. K. Anna, S. A. Ritu, S. F. Nuri
Chalcogenide Letters, Vol.20, No.11, pp. 837-845, 2023, DOI:10.15251/CL.2023.2011.837
Abstract Researchers are doing intense research in tin sulfide (SnS)-based solar cells because of their outstanding semiconducting features. In this work, the solar cell capacitance simulator (SCAPS-1D) has been used to do the simulation study of thin films solar cells using SnS absorber layer with different buffer layers (ZnO, ZnSe, CdZnS, TiO₂) in comparison to the toxic CdS buffer layer. Photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) is evaluated as a function of absorber layer thickness, different buffer layer and buffer layer thickness. Device stability at different operating temperature is also evaluated. More >

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