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Threshold behaviours in GexAs10Se90-x and GexSb10Se90-x glasses

S. W. Xu*, T. W. Liang

College of Mathematics and Physics, Hunan University of Arts and Science, 415000, Changde, People’s Republic of China

* Corresponding Author: email

Chalcogenide Letters 2023, 20(11), 829-835. https://doi.org/10.15251/CL.2023.2011.829

Abstract

We investigated the effect of the elemental substitution of As by Sb on the threshold behaviours in GexSb10Se90-x glasses. We found that, while the transition thresholds at MCN=2.4 and 2.67 were verified in the GeAsSe glasses, the transition thresholds can be changed to chemically stoichiometric compositions if As is substituted by Sb. We further deconvolved Raman spectra into different structural units and the change of their respective intensity showed the same behaviour, and this was ascribed to the chemical effect induced by a large difference of the atomic radius between As and Sb, and a relatively strong ionic feature of the element Sb.

Keywords

Chalcogenide glasses, Transition thresholds, Raman spectra

Cite This Article

APA Style
Xu, S.W., Liang, T.W. (2023). Threshold behaviours in GexAs10Se90-x and GexSb10Se90-x glasses. Chalcogenide Letters, 20(11), 829–835. https://doi.org/10.15251/CL.2023.2011.829
Vancouver Style
Xu SW, Liang TW. Threshold behaviours in GexAs10Se90-x and GexSb10Se90-x glasses. Chalcogenide Letters. 2023;20(11):829–835. https://doi.org/10.15251/CL.2023.2011.829
IEEE Style
S.W. Xu and T.W. Liang, “Threshold behaviours in GexAs10Se90-x and GexSb10Se90-x glasses,” Chalcogenide Letters, vol. 20, no. 11, pp. 829–835, 2023. https://doi.org/10.15251/CL.2023.2011.829



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