Open Access

ARTICLE

The effects of thickness and doping concentration on the solar efficiency of GaN/p-Si based solar cells

N. S. Khairuddin^a, M. Z. Mohd Yusoff^a,*, H. Hussin^b

a School of Physics and Material Studies, Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
b School of Electrical Engineering, College of Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia

* Corresponding Author:

Chalcogenide Letters 2023, 20(9), 629-637. https://doi.org/10.15251/CL.2023.209.629

Received 21 June 2023; Accepted 01 September 2023;

Abstract

In this study, we used the PC1D simulator to demonstrate the performance analysis of a solar cell model based on gallium nitride (GaN). It has been discovered that when the layer thickness of the GaN substrate grows, the efficiency of solar cells decreases. This was found by comparing the doping concentration and layer thickness on the GaN and silicon substrates. As the thickness of the p-doping Si layer rises, cell efficiency increases just modestly. The optimal doping concentrations for GaN and p-silicon are 1x10¹⁸ cm^-3 and 1x10¹⁷ cm^-3 , respectively. In compared to other designs, GaN/p-silicon solar cells have the highest efficiency of 25.26%.

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Keywords

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