Open Access

ARTICLE

Electronic Properties of MoSe₂/ZrSe₃ Junction Field Effect Transistor

Changlim Woo¹, Abdelkader Abderrahmane², Pan Gum Jung³, Pil Ju Ko^1,*

1 Department of Electrical Engineering, Chosun University, 375, Seosuk–dong, Dong–gu, Gwangju, Republic of Korea
2 Elaboration and Characterization Physical Mechanics and Metallurgical of Materials (ECP3M) Laboratory, Abdelhamid Ibn Badis University Mostaganem, National Road No. 11, Kharrouba, Mostaganem, Algeria
3 Electrical Innovative Industry R&D Department, Green Energy Institute, 177 Samhyangcheonro, Mokpo-si, Republic of Korea

* Corresponding Author: Pil Ju Ko. Email:

Chalcogenide Letters 2026, 23(7), 7 https://doi.org/10.32604/cl.2026.085424

Received 11 May 2026; Accepted 21 July 2026; Issue published 07 August 2026

Abstract

Transition metal dichalcogenides (TMDs) and transition metal trichalcogenides (TMTCs) exhibit tunable electronic properties, and when stacked together in their two dimensional (2D) forms, they can display distinctive electronic properties beyond those of conventional heterostructures. In this study, we fabricated for the first time junction field effect transistor (JFET) by stacking MoSe₂, a transition metal dichalcogenide (TMD), with ZrSe₃, a transition metal trichalcogenide (TMTC). We characterized its electrical properties, where the device’s electrical characteristics were analyzed based on the stacking sequence. Two device configurations top-gate and bottom-gate JFETs were fabricated and systematically analyzed. Notably, the top-gate JFET exhibited superior performance, with transconductance (gm) reaching 12.8 μS, carrier mobility up to 366.95 cm²/Vs, and a subthreshold swing (SS) of 13.25 V/dec, significantly outperforming the bottom-gate configuration. The successful demonstration of this device not only establishes the feasibility of MoSe₂/ZrSe₃ heterojunctions for high performance JFET applications but also paves the way for next generation electronic devices based on engineered 2D heterostructures.

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Keywords

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