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ARTICLE

Preparation and analysis of Ag₂Se_1-xTe_x thin film structure on the physical properties at various temperatures by thermal evaporation

Hiba M. Ali^*, I. Khudayer

Department of Physics, College of Education for Pure Science / Ibn AlHaitham,University of Baghdad, Baghdad, Iraq

* Corresponding Author:

Chalcogenide Letters 2023, 20(3), 197-203. https://doi.org/10.15251/CL.2023.203.197

Received 22 November 2022; Accepted 07 March 2023;

Abstract

Silver selenide telluride Semiconducting (Ag₂Se_0.8Te_0.2) thin films were by thermal evaporation at RT with thickness350 nm at annealing temperatures (300, 348, 398, and 448) °K for 1 hour on glass substrates .using X-ray diffraction, the structural characteristics were calculated as a function of annealing temperatures with no preferential orientation along any plane. Atomic force microscopy (AFM) and X-ray techniques are used to analyze the Ag₂SeTe thin films' physical makeup and properties. AFM techniques were used to analyze the surface morphology of the Ag₂SeTe films, and the results showed that the values for average diameter, surface roughness, and grain size mutation increased with annealing temperature (116.36-171.02) nm The transmittance and absorbance spectra are also analyzed and published in accordance with the wavelength range of (400-1100) nm, The results show that the sample's maximum absorbance value was obtained at a temperature treatment of 448 K, The findings show that the thin films under study are particular of direct transitions at optical energies of 2.05& 1.7& 1.65 and 1.6 ev.

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