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ARTICLE

Voltage and frequency controlled Ge/SeO₂ thin film transistors designed as rectifiers, negative capacitance and negative conductance sources

A. F. Qasrawi^a,c,*, Hazem K. Khanfar^b

a Department of Physics, Arab American University, Jenin, Palestine
b Department of Telecommunication Engineering, Arab American University, Jenin 240, Palestine
c Department of Electrical and Electronics Engineering, Istinye University, 34010, Istanbul, Turkey

* Corresponding Author:

Chalcogenide Letters 2023, 20(3), 177-186. https://doi.org/10.15251/CL.2023.203.177

Received 14 December 2022; Accepted 01 March 2023;

Abstract

Herein voltage and frequency controlled thin film transistors fabricated by depositing SeO₂ onto germanium thin crystals are reported. For these devices measurements of the current-voltage characteristics revealed a biasing dependent rectification ratios. The devices showed metal-oxide-semiconductor character under reverse biasing conditions. In addition, the biasing dependent capacitance and conductance spectral studies in the frequency domain of 20M-1000MHz has shown the possibility of switching the capacitance and negative conductance from negative mode to positive mode. The features of the Ge/SeO₂ devices make them attractive for use in electronic circuits as parasitic capacitive circuit elements, noise reducers, signal amplifiers and microwave oscillators.

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Keywords

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