Open Access

ARTICLE

SCAPS numerical design of MoSe₂ solar cell for different buffer layers

T. A. Chowdhury^*, R. B. Arif, H. Israq, N. Sharmili, R. S. Shuvo

Department of Electrical & Electronic Engineering, Ahsanullah University of Science & Technology, Dhaka, Bangladesh

* Corresponding Author:

Chalcogenide Letters 2024, 21(2), 175-187. https://doi.org/10.15251/CL.2024.212.175

Received 29 November 2023; Accepted 15 February 2024;

Abstract

The solar cell capacitance simulator (SCAPS-1D) has been used to simulate, design and analyze of MoSe₂, an attractive transition metal dichalcogenide (TMDC) material, based heterojunction solar cells to use it as a potential alternative to conventional absorber layers used in solar cells. The work also focuses on finding optimal absorber, buffer layer thickness and impact of operating temperature on solar cell performance with a possible replacement to toxic CdS buffer layer. It has been obtained that the optimum thickness of MoSe₂ absorber layer is 1 µm and buffer layer is about 0.04 µm. The efficiency obtained with CdS based buffer layer solar cell is 20.21%. Among different buffer layers such as In2S3, ZnO, ZnOS and ZnSe, the highest efficiency obtained of MoSe₂ based solar cell is 20.58% with ZnO buffer layer. ZnO buffer based solar cell shows a temperature gradient of -0.355%/K compared to -0.347%/K for CdS buffer based solar cell. The findings of this work provide important guidance to fabricate high-efficiency MoSe₂ thin film solar cell with non-toxic ZnO as a potential buffer layer.

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