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Tensile deformation of S adsorbed in a monolayer of ReS2 affects its electronic structure and optical properties

G. Jiaoa, G. L. Liua,*, L. Weia, J. W. Zhaoa, G. Y. Zhangb

a College of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, Liaoning 1 10870,China
b College of Physics, Shenyang Normal University, Shenyang 1 10034, China

* Corresponding Author: email

Chalcogenide Letters 2023, 20(6), 409-421. https://doi.org/10.15251/CL.2023.206.409

Abstract

Using density functional theory, the effect of biaxial tensile strain on adsorption of S in ReS2 monolayer is calculated. The study finds intrinsic ReS2 system and monolayer ReS2 adsorbed S system are affected by tensile deformation. Intrinsic ReS2 has direct band gap. As S appears, the system becomes indirect band gap. With tensile deformation amount of the intrinsic ReS2 system reaching 10%, the band gap reduces to 0.064eV. The growth rate of reflection and absorption coefficient are decreased by tensile deformation. The maximum reflection and absorption peak undergo red shift, improving the light reflection and absorption ability of adsorption system.

Keywords

ReS2, Tensile deformation, Electronic properties, Optical properties

Cite This Article

APA Style
Jiao, G., Liu, G.L., Wei, L., Zhao, J.W., Zhang, G.Y. (2023). Tensile deformation of S adsorbed in a monolayer of ReS2 affects its electronic structure and optical properties. Chalcogenide Letters, 20(6), 409–421. https://doi.org/10.15251/CL.2023.206.409
Vancouver Style
Jiao G, Liu GL, Wei L, Zhao JW, Zhang GY. Tensile deformation of S adsorbed in a monolayer of ReS2 affects its electronic structure and optical properties. Chalcogenide Letters. 2023;20(6):409–421. https://doi.org/10.15251/CL.2023.206.409
IEEE Style
G. Jiao, G.L. Liu, L. Wei, J.W. Zhao, and G.Y. Zhang, “Tensile deformation of S adsorbed in a monolayer of ReS2 affects its electronic structure and optical properties,” Chalcogenide Letters, vol. 20, no. 6, pp. 409–421, 2023. https://doi.org/10.15251/CL.2023.206.409



cc Copyright © 2023 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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