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ARTICLE

Effect of substrate temperature on physical properties of Co doped SnS₂ thin films deposited by ultrasonic spray pyrolysis

Z. Hadef^a,*, K. Kamli^a, O. Kamli^b, S. Labiod^a

a Department of physics, Faculty of Sciences, University 20 August 1955, BP 26, 21000 Skikda, Algeria
b Department of mining and geology, Faculty of technology, University of Bejaia, 06000, Bejaia, Algeria

* Corresponding Author:

Chalcogenide Letters 2023, 20(8), 587-597. https://doi.org/10.15251/CL.2023.208.587

Received 07 June 2023; Accepted 14 August 2023;

Abstract

Ultrasonic Spray Pyrolysis (USP) was used to deposited Co doped SnS₂ thin films on a glass substrate at different substrate temperatures (Ts = 350 °C, 375 °C, 400 °C, and 425 °C). DRX patterns shows that the synthesized films revealed a pure SnS2 phase with hexagonal structure. The mean crystalline grain sizes were showed an increasing– decreasing trend between 15.67 and 29.84 nm with an increment in the substrate temperature. The SEM images were significantly affected by the substrate temperature. Also, the optical band gap increases from 2.62 to 3.00 eV with the substrate temperatures increasing. Hall Effect measurements confirm the n-type conductivity of the as-deposited films. Furthermore, the films resistivity varies between 117 Ω.cm to 0.20 Ω.cm, as the substrate temperature increases from 350 to 425 °C.

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Keywords

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