Open Access

ARTICLE

The impact of annealing on the optoelectronic properties of tin selenide thin films for photovoltaics

M. Jabeen^a, N. Ali^b,*, Z. Ali^c, H. Ali^b, A. A. A. Bahajjaj^d, B. Haq^e, S. H. Kim^e

a Government Graduate college for women south City okara, Pakistan
b Department of Physics, Government Post graduate Jahanzeb College Saidu Sharif Swat, 19130, Pakistan
c National Centre for Physics, Islamabad, 44000, Pakistan
d Department of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
e Faculty of Science Education, Jeju National University, Jeju 63243, Republic of Korea

* Corresponding Author:

Chalcogenide Letters 2024, 21(2), 125-133. https://doi.org/10.15251/CL.2024.212.125

Received 30 October 2023; Accepted 01 February 2024;

Abstract

In this study, Tin selenide (SnSe) was prepared via thermal evaporation from tin ingots and selenium powder followed by annealing at 250°C in an inert atmosphere of Argon gas. Two samples were used for characterization purposes, as-deposited and annealed. The structural parameters including particle size, strain, dislocation density, and number of crystallites per unit area were calculated from XRD while the optical properties including band gap were extracted from UV-visible spectroscopy. Four probe techniques were used to measure the electrical properties.

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Keywords

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