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ARTICLE

Optical and electrical properties of Ni⁺² doped nanocrystalline Bi₂S₃ thin films prepared by chemical bath deposition method

M. A. Hussain^a,*, P. J. Saikia^b, S. R. Devi^a, L. R. Singh^c

a Department of Physics, Presidency College, Motbung-795107, Manipur, India
b Department of Electronics, Jagannath Barooah College (Autonomous), Jorhat-785001, Assam, India
c Department of Physics, D.M. College of Science, Imphal-795001, Manipur, India

* Corresponding Author:

Chalcogenide Letters 2024, 21(2), 151-159. https://doi.org/10.15251/CL.2024.212.151

Received 27 October 2023; Accepted 05 February 2024;

Abstract

Nickel (Ni⁺²) doped nanocrystalline Bi₂S₃ thin films are deposited on the glass substrate from the solutions containing Bismuth Nitrate, Ethylenediamine Tetraacetic acid (EDTA) and Thioacetamide at a bath deposition temperature of 318K. The optical, surface morphological and electrical properties of Ni-doped Bi₂S₃ thin films prepared at three different doping concentration are investigate by using ultraviolet–visible transmission spectra (UV–Vis), Scanning electron microscopy (SEM), Energy Dispersive X-ray (EDAX) and thermo-e.m.f. techniques. The optical band gap energies are found in between 2.32-2.43 eV. The SEM images show that the prepared films are continuous, dense and distributed over the entire area with good uniformity. The electrical conductivity of the films are in the order of 10^-2Ω^-1m^-1. The films are n-type as determined from the Hot Probe method. Photoconductivity studies reveal that photocurrent increases with the increase in Ni doping concentrations. Due to the absorption of photons, free electron-hole pairs (EHP) are produce.

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Keywords

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