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Numerical simulation of Sb2Se3-based solar cells

S. H. Liua, J. R. Yuana,*, Y. Wua, X. H. Denga, Q. M. Yub

a School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
b School of Chemistry and Chemical Engineering, Nanchang University, Nanchang 330031, China

* Corresponding Author: email

Chalcogenide Letters 2024, 21(3), 229-241. https://doi.org/10.15251/CL.2024.213.229

Abstract

Antimony selenide (Sb2Se3) has remarkable optoelectronic capabilities that make it a promising option for the next generation solar cells. In this work, a solar cell with the structure Al/FTO/CdS/Sb2Se3/Mo is modeled and numerically analyzed using SCAPS-1D program. Furthermore, a Al/FTO/CdS/Sb2Se3/Sb2S3/Mo solar cell structure that uses Sb2S3 as the back surface field (BSF) layer is proposed. A comprehensive examination of photovoltaic characteristics for the solar cells was carried out. The optimization process involved adjusting the operating temperature, series and shunt resistance, doping concentration, bulk defect density, back contact metal work function, and thickness of the absorber layer. The optimized Sb2Se3-based solar cell with Sb2S3 material showed a conversion efficiency of 28.91%, suggesting that Sb2Se3-based solar cells have a great deal of potential for further development.

Keywords

Antimony selenide, Solar cells, SCAPS-1D, Conversion efficiency

Cite This Article

APA Style
Liu, S.H., Yuan, J.R., Wu, Y., Deng, X.H., Yu, Q.M. (2024). Numerical simulation of Sb2Se3-based solar cells. Chalcogenide Letters, 21(3), 229–241. https://doi.org/10.15251/CL.2024.213.229
Vancouver Style
Liu SH, Yuan JR, Wu Y, Deng XH, Yu QM. Numerical simulation of Sb2Se3-based solar cells. Chalcogenide Letters. 2024;21(3):229–241. https://doi.org/10.15251/CL.2024.213.229
IEEE Style
S.H. Liu, J.R. Yuan, Y. Wu, X.H. Deng, and Q.M. Yu, “Numerical simulation of Sb2Se3-based solar cells,” Chalcogenide Letters, vol. 21, no. 3, pp. 229–241, 2024. https://doi.org/10.15251/CL.2024.213.229



cc Copyright © 2024 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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