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Attention-Enhanced YOLOv8-Seg with WGAN-GP-Based Generative Data Augmentation for High-Precision Surface Defect Detection on Coarsely Ground SiC Wafers
Department of Mechanical Engineering, National Chin-Yi University of Technology, Taichung, Taiwan
* Corresponding Author: Chih-Yung Huang. Email:
Computers, Materials & Continua 2026, 87(2), 61 https://doi.org/10.32604/cmc.2026.075398
Received 31 October 2025; Accepted 07 January 2026; Issue published 12 March 2026
Abstract
Quality control plays a critical role in modern manufacturing. With the rapid development of electric vehicles, 5G communications, and the semiconductor industry, high-speed and high-precision detection of surface defects on silicon carbide (SiC) wafers has become essential. This study developed an automated inspection framework for identifying surface defects on SiC wafers during the coarse grinding stage. The complex machining textures on wafer surfaces hinder conventional machine vision models, often leading to misjudgment. To address this, deep learning algorithms were applied for defect classification. Because defects are rare and imbalanced across categories, data augmentation was performed using a Wasserstein generative adversarial network with gradient penalty (WGAN-GP), along with conventional methods. An improved YOLOv8-seg instance segmentation model was then trained and tested on datasets with different augmentation strategies. Experimental results showed that, when trained with WGAN-GP–generated data, YOLOv8-seg achieved mean average precision values of 87.0% (bounding box) and 86.6% (segmentation mask). Compared with the traditional WGAN-GP, the proposed model reduced Fréchet inception distance by 32.2% and multiscale structural similarity index by 29.8%, generating more realistic and diverse defect images. The proposed framework effectively improves defect detection accuracy under limited data conditions and shows strong potential for industrial applications.Keywords
Cite This Article
Copyright © 2026 The Author(s). Published by Tech Science Press.This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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