W.H. Chen1, H.C. Cheng2,3, C.F. Yu1,3
CMES-Computer Modeling in Engineering & Sciences, Vol.109-110, No.1, pp. 1-13, 2015, DOI:10.3970/cmes.2015.109.001
Abstract This study aims at exploring the interfacial adhesion strength between solder bump and four typical under bump metallurgies (UBMs), i.e., Cu/Ni, Cu/TiW, Cu/Ni/Cr and /Cu/V/Cr, at atomistic scale. The average bond length and interfacial adhesion stress of the Sn-3.5Ag/Cu/Ni, Sn-3.5Ag/Cu/TiW, Sn-3.5Ag/Cu/Ni/Cr and Sn-3.5Ag/Cu/V/Cr micro-bump interconnects are calculated through the firstprinciples density functional theory (DFT) calculation to estimate the interfacial adhesion strength between the solder bump and UBMs. In addition, by investigating the electric field effect on the average bond length and adhesive stress, the combination of solder bump and UBM with better interfacial adhesion strength and electromigration resistance ability can… More >
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