M. S. Tivanovb,, T. M. Razykova, K. M. Kuchkarova,b,, A. N. Olimova, R. R. Khurramova, D. Z. Isakova, Z. A. Makhmudova, M. Pirimmetova, A. Nasirovc, D. S. Baykob, O. V. Korolikb
Chalcogenide Letters, Vol.21, No.10, pp. 819-828, 2024, DOI:10.15251/CL.2024.2110.819
Abstract Using the thermal evaporation method, thin crystalline films of Sb2(SxSe1-x)3 are produced
at the substrate temperature of 300℃. The mixed powders of the Sb2S3 and Sb2Se3 is used
as a source material. The influence of the S/Se component ratio on the morphology and
structural characteristics of Sb2(SxSe1-x)3 thin films is investigated. As demonstrated by the
results of X-ray energy dispersive spectroscopy, the formed films of Sb2(SxSe1-x)3 have a
components ratio close to the stoichiometry. Besides, Morphological and structural analyses
reveal significant differences in the surface morphology of Sb2(SxSe1-x)3 thin film absorbers,
indicating that the properties of the films More >