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ARTICLE

Steady-state and transient photocurrents of As-S-Sb-Te amorphous thin films

O. V. Iaseniuc^*, M. S. Iovu

Institute of Applied Physics, Moldova State University, 5 Academiei str., MD2028, R. Moldova

* Corresponding Author:

Chalcogenide Letters 2023, 20(10), 725-731. https://doi.org/10.15251/CL.2023.2010.725

Received 07 July 2023; Accepted 10 October 2023;

Abstract

In the present work some nanostructured quaternary chalcogenides of the As-S-Sb-Te sys tem have been investigated by a photoelectric method. The spectral distribution of steady state photocurrent I_ph=(λ) and the relaxation curves of photocurrent I_ph=(t) were registered at positive and negative polarity of the applied voltage to the top Al illuminated electrode. In the spectral distribution of steady-state photocurrent, for the amorphous thin films As_1.17S_2.7Sb_0.83Te_0.40, As_1.04S_2.4Sb_0.96Te_0.60, As_0.63S_2.7Sb_1.37Te_0.30, and As_0.56S_2.4Sb_1.44Te_0.60 in the wavelength range λ=0.50÷0.92 mm (2.48÷1.35 eV) some maxima were detected, which are the result of the presence of binary clusters As₂S₃, Sb₂S₃ and Sb₂S₃. The photo voltaic method was used to obtain the value of the band gap width, which was about Eg =1.41 eV.

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Keywords

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