Open Access

ARTICLE

Modelling and simulation of PN junction CdS/CdTe for betavoltaic cell

A. Talhi^a,*, B. Azeddine^b,c, Z. Tiouti^c, M. Rajczyk^d

a Laboratory of Environmental and Energetic Systems , University Centre Ali Kafi Tindouf, Algeria
b Laboratory for the Development of Renewable Energies and their Applications in Saharian Areas; University Tahri Mohammed Bechar, Algeria
c Laboratory of Physics and Semiconductors Devices, University Tahri Mohammed Bechar, Algeria
d Politechnika Częstochowska, University of Technology, Poland

* Corresponding Author:

Chalcogenide Letters 2023, 20(4), 243-249. https://doi.org/10.15251/CL.2023.204.243

Received 10 January 2023; Accepted 04 April 2023;

Abstract

The method for producing power by integrating a beta source to semiconductors junction’s devices is called as betavoltaic energy conversion. [1]. In this study by using Monte Carlo (MC) method to simulate the distribution of electron- hole pairs (EHP) generated at each point in the cell under bombardment of ⁶³ Ni source for betavoltaic cell then the result of that Monte Carlo simulation will be used in the modelling and simulation of a betavoltaic cell CdS/CdTe heterojunction and their characteristics.

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Keywords

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