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ARTICLE

Photoelectret effect in polymer-A^II B^VI (CdS, ZnS) composites of photosensitive semiconductors

A. F. Gochuyeva^*, Kh. Kh. Hashimov, I. Y. Bayramov

Azerbaijan State Oil and Industry University, Azadlig ave. 34, Baku AZ1010, Azerbaijan

* Corresponding Author:

Chalcogenide Letters 2023, 20(4), 285-291. https://doi.org/10.15251/CL.2023.204.285

Received 09 March 2023; Accepted 10 April 2023;

Abstract

The photoelectret effect in composite heterostructures consisting of polar (fluorinecontaining) and non-polar (polyolefins) polymers - high density polyethylene (HDPE), low density polyethylene (LDPE), F42, F2-ME and the inorganic phase A^II B^VI (CdS, ZnS) has been studied. It has been established that the difference in photoelectret potentials in a given volume share of the inorganic phase mainly depends on the polarity of the polymer matrix. A possible mechanism of the photoelectret effect formed under the combined action of a strong electric field and light in these composites. It has been experimentally established that the potential barrier formed at the polymer- A^II B^VI semiconductor interface separates the electric charge carriers formed as a result of the internal photoelectric effect and ensures the formation of an electret potential difference. The electret charge state of polymer-A^II B^VI composites was studied using the spectrum of thermally stimulated current.

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Keywords

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