Open Access

ARTICLE

The effects of etching time and hydrogen peroxide concentration on the ZnO/glass substrate

S. M. Alias^a, M. Z. Mohd Yusoff^b,*, M. S. Yahya^c

a Chemical Engineering Studies, College of Engineering, Universiti Technologi MARA, Cawangan Pulau Pinang, Kampus Permatang Pauh, 13500 Jalan Permatang Pauh, Pulau Pinang.
b School of Physics and Material Studies, Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
c Faculty of Ocean Engineering Technology and Informatics, Universiti Malaysia Terengganu, 21030 Kuala Nerus, Terengganu

* Corresponding Author:

Chalcogenide Letters 2023, 20(4), 293-299. https://doi.org/10.15251/CL.2023.204.293

Received 02 March 2023; Accepted 13 April 2023;

Abstract

The purpose of the study is to determine the best technique for etching ZnO thin films. ZnO is deposited on the glass substrate using a radio frequency sputtering equipment. To etch the ZnO thin film, hydrogen peroxide (H₂O₂) concentrations of 10%, 20%, and 30% are utilised, with etching times of 30 and 60 seconds. The optical band gap is lowered after a specific quantity of etching, which shows that the film's crystallinity quality has improved. The impact of various ZnO thicknesses on the sample's optical properties is investigated using OPAL 2 simulator. In comparison to other ZnO layers of varied thickness, the OPAL 2 simulation shows that the 400 nm ZnO layer has the lowest transmission in the UV wavelength range.

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Keywords

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