Open Access

ARTICLE

Structural and device fabrication of 2D-MoS₂ thin film

R. Singh^a,*, S. Kimothi^b, M. V. Singh^c, U. Rani^d, A. S. Verma^d,e,*

a Department of Physics, Institute of Applied Sciences & Humanities, GLA University, Mathura 281406 India
b Department of Physics, Graphic Era Deemed to be University, Dehradun, Uttarakhand 284001 India
c Department of Chemistry, Dev Bhoomi Uttarakhand University, Dehradun, Uttarakhand 284007 India
d Division of Research & Innovation, School of Applied and Life Sciences, Uttaranchal University, Dehradun, Uttarakhand 284007 India
e University Centre for Research & Development, Department of Physics, Chandigarh University, Mohali, Punjab 140413 India

* Corresponding Author:

Chalcogenide Letters 2023, 20(8), 573-578. https://doi.org/10.15251/CL.2023.208.573

Received 25 May 2023; Accepted 07 August 2023;

Abstract

In this research paper, we have prepared thin film of MoS₂ by thermal evaporation technique and characterized it. This thin film depositions lead to amorphous thin film. To make it crystalline, thermal annealing of the film have deposited on the substrates at 800 ℃ for two hour under vacuum environment. X-ray diffraction data of thin film shows the poly-crystalline nature. The Atomic Force Microscopy (AFM) image of the thin film shows the crystallinity with regularly arranged grains. Furthermore, an unconventional MoS₂ based FET device has been fabricated by depositing thin film of MoS₂ on p-type silicon. Thereafter, its transfer and output characteristics have been studied. The results show n-type semiconductor behaviour with an on/off ratio of about 10³ and field-effect mobility of ~0.015 cm₂/V. s at V_DS of 1 V.

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Keywords

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