Open Access

ARTICLE

Study of the effect of CdCl₂ introduction on the high temperature activation treatment of CdTe:As polycrystalline thin films

G. M. Liu^a, G. Hu^b, P. Tang^c, L. L. Wu^a,d,*, X. Hao^a,d, G. G. Zeng^a, W. W. Wang^a, J. Q. Zhang^a,d

a College of Materials Science and Engineering & Institute of New Energy and Low-carbon Technology, Sichuan University, Chengdu 610065, China
b Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China
c Chengdu Textile College, Chengdu 611731, China
d Engineering Research Center of Alterative Energy Materials & Devices, Ministry of Education, Chengdu 610065, China

* Corresponding Author:

Chalcogenide Letters 2024, 21(10), 797-808. https://doi.org/10.15251/CL.2024.2110.797

Received 09 July 2024; Accepted 10 October 2024;

Abstract

V-doped CdTe polycrystalline films can achieve both doping activation and defect passivation by high-temperature CdCl₂ heat treatment, but this requires simultaneous modulation of the amount of CdCl₂ introduced to obtain high-quality films. It is found that increasing the CdCl₂ introduction does not change the physical phase structure and lattice constant of CdTe:As thin films, but promotes grain recrystallisation, and can promote the formation of A-center, and inhibit the formation of Cd vacancy (VCd) defects, as well as the formation of deep energy level defects. The results provide guidance for the improvement of high-temperature CdCl₂ heat treatment of V-doped CdTe polycrystalline thin films.

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Keywords

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