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ARTICLE

Impact of different rinsing temperatures on SnS thin films created using the SILAR technique

Y. Qachaou^a,*, O. Daoudi^b, I. Jellal^a, A. Fahmi^a, M. Lharch^a, A. Qachaou^a, A. Raidou^a, M. Fahoume^a

a Laboratory of Materials Physics and Subatomic, Department of Physics, Faculty of Science, Ibn Tofail University, Kenitra Morocco
b Laboratory of Engineering and Materials (LIMAT), Faculty of Sciences Ben M'sik, Hassan II University of Casablanca, Morocco

* Corresponding Author:

Chalcogenide Letters 2024, 21(7), 557-565. https://doi.org/10.15251/CL.2024.217.557

Received 16 April 2024; Accepted 19 July 2024;

Abstract

The (SnS) thin films were prepared by Successive Ionic Layer Adsorption and Reaction (SILAR), a versatile and simple method. The cationic and anionic solutions SnCl₂.2H₂O and Na₂S.9H₂O respectively were used as precursor materials, which will be deposited on glass substrates to study the effect of rinsing temperature on the properties of our thin films. The structural, morphological, and optical properties were investigated by using X-ray diffraction, Energy Dispersive X-ray analysis (EDX), Scanning Electron Microscopy (SEM) and spectrophotometer. X-ray Diffraction (XRD) patterns indicated that the deposited SnS thin films have an orthorhombic crystal structure. Uniform deposition of the material over the entire glass substrate was shown by Scanning Electron Microscopy (SEM). The optical band gap energy ranged from 1.5 to 1.82eV for direct transitions and from 0.6 to 0.95eV for indirect transitions.

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Keywords

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