Open Access

ARTICLE

Effects of thermal and laser annealing on the structure of Ge₂Sb₂Te₅ thin films

K. Turmanova^a, O. Prikhodko^a, Zh. Tolepov^a, S. Maksimova^a, N. Manabaev^b, N. Almas^c,*

a NAO al-Farabi Kazakh National University, 71 Al-Farabi Avn, IETP, 050040 Almaty, Kazakhstan
b Department of General Physics, Satbayev University, Satpayeva st., 22, 050040 Almaty, Kazakhstan
c Department of Science and Innovation, Astana IT University, Mangilik Yel Avn, 55/11, 010000 Astana, Kazakhstan

* Corresponding Author:

Chalcogenide Letters 2024, 21(7), 575-581. https://doi.org/10.15251/CL.2024.217.575

Received 28 April 2024; Accepted 24 July 2024;

Abstract

In this study, we used Raman spectroscopy to compare the local structure of Ge2Sb2Te5 (GST) thin films with thicknesses of 90 nm and 271 nm that were crystallized through thermal annealing and laser radiation (laser annealing) during the recording of Raman spectra in situ. We found that for all crystallized films, the position of the main peaks in the Raman spectra was almost the same, and their structure corresponded to a hexagonal close packed state. It is noteworthy that the full width at half maximum (FWHM) of the main peaks varies considerably depending on the crystallization method used.

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Keywords

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