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ARTICLE

Tensoelectric properties of (BixSb_1-x)₂Te₃ films under the influence of a microwave field

R. U. Siddikov^*, Kh. M. Sulaymonov, N. Kh. Yuldashev

Fergana State Technical University, Fergana, Uzbekistan

* Corresponding Author:

Chalcogenide Letters 2025, 22(10), 855-862. https://doi.org/10.15251/CL.2025.2210.855

Received 09 April 2025; Accepted 02 October 2025;

Abstract

This paper presents the results of an experimental study of the tens metric and dielectric properties of polycrystalline (BixSb_1-x)₂Te₃ films in the temperature range of 280−480 K and at microwave frequencies. The temperature dependences of the specific conductivity, impedance, and permittivity under the action of uniaxial static deformation are analyzed. The deformation phenomena detected in polycrystalline films under the action of a microwave field are qualitatively interpreted based on the effective medium theory.

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Keywords

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