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Theoretical Simulation of the Physical Properties of Solar Energy Material α-Cu2Se
1 School of Materials Science and Engineering, Yancheng Institute of Technology, Yancheng, 224051, China
2 College of Electronic and Information Engineering, Yangtze Normal University, Fuling, Chongqing, 408000, China
3 Department of Optoelectronics, Huaihua University, Huaihua, 418000, China
* Corresponding Author: S. H. Fan. Email:
Chalcogenide Letters 2025, 22(12), 987-997. https://doi.org/10.15251/CL.2025.2212.987
Accepted 10 September 2025; Issue published 01 December 2025
Abstract
Using first-principles calculations, the physical behavior of α-Cu2Se are thoroughly examined. The computed structural parameters align closely with experimental data. Through computational analysis, the electronic properties for α-Cu2Se are determined. Additionally, mechanical characteristics-including bulk modulus B, shear modulus G, Young’s modulus E, and B/G are evaluated under varying pressure conditions. Furthermore, the optical properties are investigated. The study reveals that α-Cu2Se exhibits a direct bandgap of 0.782 eV, indicating its promising potential for optoelectronic applications.Keywords
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Copyright © 2025 The Author(s). Published by Tech Science Press.This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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