Open Access

ARTICLE

Cu₂MgSnS₄ thin films: a promising absorber material for next-generation solar cells

Y. B. K. Kumar^a,, S. G. Prasad^b, A. S. S. Smitha^c, S. M. Naidu^d, G. S. Babu^c, P. U. Bhaskar^e, U. Chalapathi^f,

a Solar Energy Laboratory, Mohan Babu University (Erstwhile Sree Vidyanikethan Engineering College), Tirupati-517102, India
b Department of Physics, N.T.R. Government Degree College, Vayalpad-517299, India
c Department of Physics, Government Degree College, Puttur-517583, India
d Department of Physics, Vel Tech Rangarajan Dr. Sagunthala R&D Institute of Science and Technology (Deemed to Be University), Avadi, Chennai-600062, India
e Mundra Solar Technology LTD (Adani Solar), Mundra, Gujarat-370435, India
f Department of Electronic Engineering, Yeungnam University, 280 Daehak-Ro, Gyeongsan, Gyeongbuk, 38541, South Korea

* Corresponding Author:

Chalcogenide Letters 2025, 22(9), 847-854. https://doi.org/10.15251/CL.2025.229.847

Received 11 June 2025; Accepted 25 September 2025;

Abstract

Cu₂MgSnS₄ thin films have emerged as potential candidates for use in photovoltaic applications owing to their direct band gap properties. These quaternary compounds are fabricated through the spray pyrolysis method at 175 °C, utilizing two different carrier gases, such as air and nitrogen. After pyrolysis, deposited films are annealed at 450 °C for 1 hour. Structural analysis confirms the films exhibit a tetragonal kesterite structure. Using nitrogen as the carrier gas results in a larger crystallite size, accompanied by a reduction in both the dislocation density and microstrain. Raman spectroscopy further validates phase purity. Surface morphology analysis indicates a more compact grain structure in films deposited under nitrogen. Optical measurements reveal a strong absorption coefficient and a direct band gap of approximately 1.55 eV for nitrogen-grown samples. Cu₂MgSnS₄-based solar cells demonstrate promising optoelectronic characteristics.

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Keywords

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