Open Access

ARTICLE

Electrical properties of Bi_xSe_100-x chalcogenide glass

A. Z. Mahmoud^a,b, L. G. Amin^c,*, S. A. Mahmoud^d, M. M. Bashier^e, M. E. M. Eisac^e, N. Dhahri^c, A. Mohamed^e, A. A. Al-Dumiri^c, S. E. I. Yagoub^c, M. A. Abdel-Rahim^b

a Department of Physics, College of Sciences, Qassim University, Buraydah Almolaydah, 51452, Buraydah, Saudi Arabia
b Department of Physics, Faculty of Sciences, Assiut University, Assiut 71516, Egypt
c Physics Department, Faculty of Science, Northern Border University, Arar, Saudi Arabia
d Center for Scientific Research and Entrepreneurship, Northern Border University, Arar 73213, Saudi Arabia
e Department of Mathematics, Faculty of Science, Northern Border University, Arar, Saudi Arabia

* Corresponding Author:

Chalcogenide Letters 2025, 22(4), 441-450. https://doi.org/10.15251/CL.2025.224.441

Received 07 January 2025; Accepted 30 April 2025;

Abstract

The electrical and structural characteristics of Bi_xSe_100-x glasses (where x=5, 10, 15, and 25 at. %) were systematically investigated. Using the traditional Quenching of melts process, the amorphous Bi_xSe_100-x materials were created. Thin films of Bi_xSe_100-x have formed onto ultrasonically glass substrates that have been cleaned using thermal evaporation in a vacuum of approximately 10^-5 Torr. Here we show and discuss the results of four bulk glasses of Bi_xSe_100-x (where x=5, 10, 15, and 25 at. %) that were subjected to differential thermal analysis (DTA) under non-isothermal conditions. For the compositions under consideration, five separate methods were used to calculate the activations of the change from amorphous to crystalline. The crystalline phases obtained from differential thermal analysis (DTA), additionally, scanning electron microscopy (SEM) have been characterized utilizing x-ray diffraction. The glass forming factors kg are derived for the analyzed compositions. The relationship between electrical conductivity (σ) and composition, as well as annealing temperature (T) within the range of 300–400 K, has been examined for Bi_xSe_100-x (x=5, 10, 15, and 25 at. %) amorphous thin films. The electrical measurements acquired are ultimately analyzed in relation to the amorphous–crystalline change.

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Keywords

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