Open Access

ARTICLE

Gamma radiation dose's impact on the energy states and structural properties of Se₇₀Ge₂₀Sb₁₀ alloy

J. H. Azzawi^a, Yaseen A. Al-Zahraa^b, M. A. Abdulmajeed^c, K. A. Jasim^c, A. Muravitskaya^e, A. A. Al-Hamadani^d,e, A. H. Al-Dulaimi^d,e

a Directorate of Education, Diyala, Iraq
b Ministry of Education, Karkh Education Directorate, Iraq
c Department of Physics, College of Education for Pure Sciences ibn Al-Haitham, University of Baghdad, Iraq
d Physics Department, College of Science, University of Diyala, Diyala, Iraq
e Department of Physics, University of Hull,Hull HU6 7RX, U.K.

* Corresponding Author:

Chalcogenide Letters 2025, 22(7), 593-601. https://doi.org/10.15251/CL.2025.227.593

Received 02 April 2025; Accepted 08 July 2025;

Abstract

Four Se₇₀Ge₂₀Sb₁₀ alloy samples were prepared using the melt quenching technique. To improve the energy states of the mobility gap, the samples were exposed to gamma radiation from 60Co source at various doses of 600, 1200, 1500, and 2000 Gy. The electrical characteristics were examined both before and after irradiation. The conductivity analysis revealed that all of our samples were impacted by gamma radiation. The reorganization of the amorphous lattice and the degree of radiation-induced disorder have been involved in the changes that occurred in the electrical characteristics of the irradiated samples. All irradiated and non-irradiated samples feature three conduction mechanisms at low temperatures, where the electrical conductivity is by hopping electrons between local states close to the Fermi level, according to the identification of the electrical conduction processes. Conduction occurs by transferring electrons between the local levels at the conduction and valence bundles' tails at intermediate temperatures. Conduction occurs in the transfer of electrons between the extended levels in the conduction and valence bands at higher temperatures. It was discovered that all of the local and extended state densities were impacted by the gamma radiation exposure and were computed close to the Fermi level.

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