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On ev and ve-Degree Based Topological Indices of Silicon Carbides

Jung Rye Lee1, Aftab Hussain2, Asfand Fahad3, Ali Raza3, Muhammad Imran Qureshi3,*, Abid Mahboob4, Choonkil Park5

1 Department of Data Science, Daejin University, Kyunggi, 11159, Korea
2 Department of Mathematics, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
3 Department of Mathematics, COMSATS University Islamabad, Vehari, 61110, Pakistan
4 Department of Mathematics, Division of Science & Technology, University of Education, Lahore, Pakistan
5 Research Institute for Natural Sciences, Hanyang University, Seoul, 04763, Korea

* Corresponding Author: Muhammad Imran Qureshi. Email: email

(This article belongs to this Special Issue: Trend Topics in Special Functions and Polynomials: Theory, Methods, Applications and Modeling)

Computer Modeling in Engineering & Sciences 2022, 130(2), 871-885.


In quantitative structure-property relationship (QSPR) and quantitative structure-activity relationship (QSAR) studies, computation of topological indices is a vital tool to predict biochemical and physio-chemical properties of chemical structures. Numerous topological indices have been inaugurated to describe different topological features. The ev and ve-degree are recently introduced novelties, having stronger prediction ability. In this article, we derive formulae of the ev-degree and ve-degree based topological indices for chemical structure of Si2C3I[a,b].


Cite This Article

Lee, J. R., Hussain, A., Fahad, A., Raza, A., Qureshi, M. I. et al. (2022). On ev and ve-Degree Based Topological Indices of Silicon Carbides. CMES-Computer Modeling in Engineering & Sciences, 130(2), 871–885.


cc This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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