Atomistic Insights into Aluminium–Boron Nitride Nanolayered Interconnects for High-Performance VLSI Systems
Mallikarjun P. Y.1, Rame Gowda D. N.1, Trisha J. K.1, Varshini M.1, Poornesha S. Shetty1, Mandar Jatkar1,*, Arpan Shah2
1 Department of Electronics and Communication Engineering, Dayananda Sagar Academy of Technology and Management, Bengaluru, 560082, India
2 School of Electronics Engineering, Vellore Institute of Technology University, Vellore, 632014, India
* Corresponding Author: Mandar Jatkar. Email: 
Computers, Materials & Continua https://doi.org/10.32604/cmc.2025.072507
Received 28 August 2025; Accepted 19 November 2025; Published online 12 December 2025
Abstract
As circuit feature sizes approach the nanoscale, traditional Copper (Cu) interconnects face significant hurdles posed by rising resistance-capacitance (RC) delay, electromigration, and high power dissipation. These limitations impose constraints on the scalability and reliability of future semiconductor technologies. Our paper describes the new Vertical multilayer Aluminium Boron Nitride Nanoribbon (AlBN) interconnect structure, integrated with Density functional theory (DFT) using first-principles calculations. This study explores AlBN-based nanostructures with doping of 1Cu, 2Cu, 1Fe (Iron), and 2Fe for the application of Very Large Scale Integration (VLSI) interconnects. The AlBN structure utilized the advantages of vertical multilayer interconnects to both reduce the RC delay while enhancing signal integrity. Key parameters like Fermi energy, bandgap, binding energy, conduction channels, quantum resistance, and RC delay were analyzed. Through modeling and large-scale simulation, the structural, electronic, and stability attributes of the AlBN interconnects are analyzed, and the results illustrate considerable improvements in signal propagation against Cu interconnect structures. These findings confirm the tunable, high-performance nature of AlBN-2Fe, making it a promising candidate for future high-speed, low-power VLSI interconnect technologies. We demonstrated an advanced energy-efficient interconnect that can be easily scaled for future nanoscale VLSI circuit design and gives rise to a next generation of viable interconnect technology for high-capacity, high-speed, reliable semiconductor technology.
Keywords
Dielectric materials; AlBN interconnects; RC delay reduction; nanoscale electronics; semiconductor technology; signal integrity
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