Open Access

ARTICLE

Design of Low Power Transmission Gate Based 9T SRAM Cell

S. Rooban¹, Moru Leela¹, Md. Zia Ur Rahman^1,*, N. Subbulakshmi², R. Manimegalai³

1 Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Vaddeswaram, Guntur, Andhra Pradesh, 522502, India
2 Department of Electronics and Communication Engineering, Francis Xavier Engineering College, Tirunelveli,Tamil Nadu, 627003, India
3 Department of Computer Science and Engineering, PSG Institute of Technology and Applied Research, Coimbatore, Tamil Nadu, 641062, India

* Corresponding Author: Md. Zia Ur Rahman. Email:

Computers, Materials & Continua 2022, 72(1), 1309-1321. https://doi.org/10.32604/cmc.2022.023934

Received 27 September 2021; Accepted 30 December 2021; Issue published 24 February 2022

Abstract

Considerable research has considered the design of low-power and high-speed devices. Designing integrated circuits with low-power consumption is an important issue due to the rapid growth of high-speed devices. Embedded static random-access memory (SRAM) units are necessary components in fast mobile computing. Traditional SRAM cells are more energy-consuming and with lower performances. The major constraints in SRAM cells are their reliability and low power. The objectives of the proposed method are to provide a high read stability, low energy consumption, and better writing abilities. A transmission gate-based multi-threshold single-ended Schmitt trigger (ST) 9T SRAM cell in a bit-interleaving structure without a write-back scheme is proposed. Herein, an ST inverter with a single bit-line design is used to attain the high read stability. A negative assist technique is applied to alter the trip voltage of the single-ended ST inverter. The multi-threshold complementary metal oxide semiconductor (MTCMOS) technique is adopted to reduce the leakage power in the proposed single-ended TG-ST 9T SRAM cell. The proposed system uses a combination of standard and ST inverters, which results in a large read stability. Compared with the previous ST 9T, ST 11T, 11T, 10T, and 7T SRAM cells, the proposed cell is implemented in Cadence Virtuoso ADE with 45-nm CMOS technology and consumes 35.80%, 42.09%, 31.60%, 12.54%, and 31.60% less energy for read operations and 73.59%, 93.95%, 92.76%, 89.23%, and 85.78% less energy for write operations, respectively.

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Keywords

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