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Flow Instability of Silicon Melt in Magnetic Fields

Koichi Kakimoto, Lijun Liu

Kyushu University, Kasuga, Fukuoka, JAPAN

Fluid Dynamics & Materials Processing 2006, 2(3), 167-174.


This paper deals with the investigation of the flow instability of molten silicon in a magnetic field during crystal growth by means of the Czochralski method. The flow exhibits a three-dimensional structure due to a transverse non-axisymmetric pattern of the magnetic field. The melt-crystal interface is found to be nearly two-dimensional. The azimuthal non-uniformity of the temperature field is much weaker on the crystal and crucible sidewalls in the case of high rotation rates of crucible and crystal than in the case of non-rotating crucible and crystal.


Cite This Article

APA Style
Kakimoto, K., Liu, L. (2006). Flow instability of silicon melt in magnetic fields. Fluid Dynamics & Materials Processing, 2(3), 167-174.
Vancouver Style
Kakimoto K, Liu L. Flow instability of silicon melt in magnetic fields. Fluid Dyn Mater Proc. 2006;2(3):167-174
IEEE Style
K. Kakimoto and L. Liu, "Flow Instability of Silicon Melt in Magnetic Fields," Fluid Dyn. Mater. Proc., vol. 2, no. 3, pp. 167-174. 2006.

cc This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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