Open Access
PROCEEDINGS
Mixed Finite Element Approach for Semiconductor Structures
Qiufeng Yang1, Xudong Li2, Zhaowei Liu3, Feng Jin1,*, Yilin Qu1,*
1 State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049, China
2 Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
3 College of Mechanics and Materials, Hohai University, Nanjing, 211100, China
* Corresponding Authors: Feng Jin, Yilin Qu. Email: ,
The International Conference on Computational & Experimental Engineering and Sciences 2023, 26(3), 1-2. https://doi.org/10.32604/icces.2023.09073
Abstract
Compared to piezoelectric effects restricted to noncentrosymmetric crystalline structures, flexoelectric
effects exist universally in all crystalline structures [1,2]. Meanwhile, some crystals, say silicon, are also
semiconductive, which raises interest in studying the interactions between mechanical fields and mobile
charges in semiconductors with consideration of piezoelectricity or flexoelectricity [3,4]. In order to explain
these coupling effects, macroscopic theories on elastic semiconductors considering piezoelectricity or
flexoelectricity were proposed by Yang and co-authors [5,6]. For piezoelectric semiconductors, the
formulation of finite elements is relatively straightforward since the governing partial derivative equation
(PDE) is twice-order. As for elastic semiconductors with consideration of flexoelectricity, it is more
challenging to formulate its finite element due to the strain gradients in the constitutive relations making
the governing PDE fourth-order. For the fourth-order PDE,
C1 continuity is required for the displacement
tensor when we use traditional finite elements (FEs) for the numerical solution, which brings difficulties in
the FE implementation [7,8]. In the present work, instead of using
C1 elements, we develop an alternative
mixed finite element with
C0 continuity for solving the problem. The convergency and accuracy of the
developed element are verified, respectively. The validated mixed FE method is then used to study the
problem of an infinite-length tube with an axisymmetric cross section. Our FE methods provide a tool for
exploring the coupling effects in elastic semiconductors.
Keywords
Cite This Article
APA Style
Yang, Q., Li, X., Liu, Z., Jin, F., Qu, Y. (2023). Mixed finite element approach for semiconductor structures. The International Conference on Computational & Experimental Engineering and Sciences, 26(3), 1-2. https://doi.org/10.32604/icces.2023.09073
Vancouver Style
Yang Q, Li X, Liu Z, Jin F, Qu Y. Mixed finite element approach for semiconductor structures. Int Conf Comput Exp Eng Sciences . 2023;26(3):1-2 https://doi.org/10.32604/icces.2023.09073
IEEE Style
Q. Yang, X. Li, Z. Liu, F. Jin, and Y. Qu "Mixed Finite Element Approach for Semiconductor Structures," Int. Conf. Comput. Exp. Eng. Sciences , vol. 26, no. 3, pp. 1-2. 2023. https://doi.org/10.32604/icces.2023.09073