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    PROCEEDINGS

    Mixed Finite Element Approach for Semiconductor Structures

    Qiufeng Yang1, Xudong Li2, Zhaowei Liu3, Feng Jin1,*, Yilin Qu1,*

    The International Conference on Computational & Experimental Engineering and Sciences, Vol.26, No.3, pp. 1-2, 2023, DOI:10.32604/icces.2023.09073

    Abstract Compared to piezoelectric effects restricted to noncentrosymmetric crystalline structures, flexoelectric effects exist universally in all crystalline structures [1,2]. Meanwhile, some crystals, say silicon, are also semiconductive, which raises interest in studying the interactions between mechanical fields and mobile charges in semiconductors with consideration of piezoelectricity or flexoelectricity [3,4]. In order to explain these coupling effects, macroscopic theories on elastic semiconductors considering piezoelectricity or flexoelectricity were proposed by Yang and co-authors [5,6]. For piezoelectric semiconductors, the formulation of finite elements is relatively straightforward since the governing partial derivative equation (PDE) is twice-order. As for elastic semiconductors with consideration of flexoelectricity, it… More >

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