Weihang Qiu¹, Bo Zhang², Zhaofeng Gu^2,*, Zijun Liu², Xiang Shen², Yimin Chen^1,2,*

Chalcogenide Letters, Vol.23, No.8, 2026, DOI:10.32604/cl.2026.089518 - 18 September 2026

Abstract This study presents electron-beam evaporated As₂Se₃ films tailored for far-infrared heterogeneous metalenses. Characterization via X-ray diffraction and Raman spectroscopy reveals a structurally relaxed network in the films compared to bulk glass, resulting in enhanced infrared transmittance, a reduced refractive index, and a lower glass transition temperature. However, thermal expansion mismatch is found to induce cracking in thick films subjected to thermal cycling. The As₂Se₃/BaF₂ system demonstrates superior adhesion, attributed to a minimal thermal expansion mismatch (Δα < 2.5 × 10⁻⁶°C⁻¹). Notably, an 8 μm thick film endures over thirty rapid heating and liquid nitrogen quenching cycles without More >

Minghui Tan^1,2, Fei Wang^2,*, Shan Yuan^1,2, Xinli Li¹, Jingxia Gao², Jinping Zhang^2,*, Yong Zhang², Lei Shi³

Chalcogenide Letters, Vol.23, No.8, 2026, DOI:10.32604/cl.2026.088891 - 18 September 2026

Abstract Li/Na/K-ion batteries show huge potential in next-generation energy storage systems, but the limited theoretical capacity of commercial graphite anodes and the relatively large radius of Na/K ions seriously restrict further development, making it urgent to develop new high-performance anode materials. This article begins with the research hotspots of selenide anode materials and systematically reviews the applications of DFT calculations in the field of Li/Na/K-ion battery selenide anodes, covering transition metal dichalcogenides (MoSe₂, TiSe₂), Janus structures (VSeTe, WSSe), transition metal carboselenides (Zr₂Se₂C, Sc₂Se₂C), multi-anion bridged phosphoselenides (MoScP₂Se₆), main-group element layered selenides (Si₂Se₂, SiSe₂, β-GeSe, γ-GeSe, β-CSe, GeSeNS, SnS_2(1−x)Se_2x), as well… More >

Huo Ye¹, Jiantong Li², Lingna Xu^3,*

Chalcogenide Letters, Vol.23, No.8, 2026, DOI:10.32604/cl.2026.087654 - 18 September 2026

Abstract SF₆ is the primary insulating and arc extinction medium in gas-insulated switchgear (GIS). Sulfur hexafluoride (SF₆) decomposes to create diagnostic markers, such as sulfur dioxide (SO₂), thionyl fluoride (SOF₂), and hydrogen sulfide (H₂S) when electrical problems occur, such as partial discharge and local overheating. Accurate quantification of these fault-marker gases is important for the early identification of insulation defects and the condition assessment of SF₆-insulated equipment. Molybdenum disulfide (MoS₂) is a well-known and atomically thin van der Waals semiconductor that has attracted considerable attention as a platform for gas-sensing applications. This is due to its large accessible surface area,… More >

Holy Oghenewona Ovwiurhobo¹, Marius O. Eji², Adil Alshoaibi³, Ndanduleni Lethole⁴, Chawki Awada³, Shumaila Islam³, Nisrin Alnaim³, Fabian I. Ezema^1,4,*

Chalcogenide Letters, Vol.23, No.8, 2026, DOI:10.32604/cl.2026.086712 - 18 September 2026

Abstract Several studies have reported a growing interest in nanomaterials beyond conventional graphite, driven by the rapid global demand for sustainable, high-performance energy storage. Among these materials, two-dimensional (2D) transition metal chalcogenides (TMCs), molybdenum- and tin-based systems such as molybdenum disulfide (MoS₂) and tin (IV) disulfide (SnS₂) in particular, have emerged as promising candidates for next-generation electrochemical energy storage devices (EESDs). This is owing to their unique X-M-X sandwich architectures, tunable electronic properties, and versatile intercalation chemistry. Despite several studies on 2D TMCs and their applications in EESDs, a gap still exists, as there is no comprehensive… More > Graphic Abstract

Qizheng Liu, Cong Chen^*

Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.087725 - 07 August 2026

Abstract The power conversion efficiency of perovskite solar cells has increased rapidly; however, interfacial-defect-induced non-radiative recombination, ion migration, and sensitivity to moisture, oxygen, and thermal stress continue to cause open-circuit voltage losses and a limited operational lifetime. Owing to its tunable energy levels, high carrier mobility, and compact hydrophobic layered structure, two-dimensional MoS₂ can serve as an electron or hole transport layer, an interfacial buffer layer, or an additive, enabling favorable energy-level alignment and optimized interfacial charge-transfer kinetics, thereby promoting carrier extraction and suppressing recombination. The sulfur sites of MoS₂ can coordinate with undercoordinated Pb²⁺ to form Pb–S… More > Graphic Abstract

Jierong Gu^1,*, Licheng Hua², Shuangquan Xie^3,4, Xiang Shen^3,4, Tiefeng Xu^3,4, Zijun Liu^3,4

Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.086724 - 07 August 2026

Abstract In this work, Ge₄₅As₄₀Se₁₅ chalcogenide glass was prepared using spark plasma sintering. This method synthesizes glass powder into blocks through a certain temperature and pressure, which is an effective densification and high-precision molding of infrared transparent blocks and lenses. Through X-ray diffraction (XRD) and differential scanning calorimetry analysis, we tracked the gradual evolution of the powder during ball milling and observed the existence of a glass transition temperature in the glass after powder hot pressing. This method can prepare components outside the conventional glass forming region with high hardness and infrared transmittance, providing a simple and More >

Navruzbek Habibullayev^1,*, Ilya Yurev^1,2, Maxim Molokeev^1,3,4, Aleksandr Aleksandrovsky^3,5, Olga Trofimova¹, Nikita Shulaev¹, Svetlana Volkova¹, Oleg Andreev^1,6

Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.085815 - 07 August 2026

Abstract A novel quaternary selenide, EuErAgSe₃, has been synthesized for the first time. The phase forms upon annealing in the 1120–1800 K range and retains its crystal structure upon cooling to ambient conditions. The phase was prepared by the ampoule method from EuSe and AgErSe₂ powders, followed by annealing at 1270 ± 10 K for up to 300 h. Powder X-ray diffraction revealed that EuErAgSe₃ crystallizes in the AgBiS₂ structure type (space group Fm-3m) with the lattice parameter a = 5.95322(14) Å. The microhardness of the phase is 340 ± 15 HV. The optical band gap for direct transitions More >

Changlim Woo¹, Abdelkader Abderrahmane², Pan Gum Jung³, Pil Ju Ko^1,*

Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.085424 - 07 August 2026

Abstract Transition metal dichalcogenides (TMDs) and transition metal trichalcogenides (TMTCs) exhibit tunable electronic properties, and when stacked together in their two dimensional (2D) forms, they can display distinctive electronic properties beyond those of conventional heterostructures. In this study, we fabricated for the first time junction field effect transistor (JFET) by stacking MoSe₂, a transition metal dichalcogenide (TMD), with ZrSe₃, a transition metal trichalcogenide (TMTC). We characterized its electrical properties, where the device’s electrical characteristics were analyzed based on the stacking sequence. Two device configurations top-gate and bottom-gate JFETs were fabricated and systematically analyzed. Notably, the top-gate JFET More >

Bilal Taher^*

Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.085371 - 07 August 2026

Abstract Nanopowder copper sulphide CuS has been synthesised successfully via the chemical bath deposition method. Two samples of precipitated CuS nanopowder were prepared at molar concentration of 0.5 M from [CuSO₄·5H₂O and Na₂S₂O₃·5H₂O] and 0.05 M from [Na₂EDTA·2H₂O]. Both samples were annealed at 150°C for one hour in air. The effects of washing and nonwashing on the structural, morphological, and compositional properties were studied. The X-ray diffraction (XRD) patterns showed that both samples have a CuS hexagonal structure with lattice constants (a = 3.773 Å , c = 16.398 Å ), and (a =… More >

M. Irshad Ahamed^1,*, P. J. Suresh Babu², R. Lal Raja Singh³, S. Sivamani², R. Leena Rose⁴

Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.084991 - 07 August 2026

Abstract Semiconductor quantum dots (QDs) with tunable narrow bandgaps have emerged as promising materials for next-generation near-infrared (NIR) optoelectronic and photovoltaic devices because their optical properties can be tailored through composition and quantum confinement. Among IV–VI chalcogenide nanomaterials, quaternary alloy systems provide greater compositional flexibility than conventional binary and ternary counterparts; however, PbSnSeS quantum dots remain largely unexplored despite their potential for broadband infrared applications. Here, the structural, electronic, and optical properties of PbSnSeS quaternary QDs synthesized by a one-pot colloidal hot-injection method are systematically investigated. The crystalline IV–VI chalcogenide phase and successful quaternary alloy formation… More >