Jasurbek Gulomov1,*, Oussama Accouche2, Rayimjon Aliev1, Marc AZAB2, Irodakhon Gulomova1
CMC-Computers, Materials & Continua, Vol.74, No.1, pp. 575-590, 2023, DOI:10.32604/cmc.2023.031289
Abstract Today, it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells, at a lower cost. Therefore, the aim of this paper is to analyze CH3NH3PbI3 and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells. CH3NH3PbI3 and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor. We propose to combine these two materials since CH3NH3PbI3 is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material. The photoelectric parameters of n-CH3NH3PbI3/p-Si,… More >
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