N. Armour1, S. Dost1,2
FDMP-Fluid Dynamics & Materials Processing, Vol.5, No.4, pp. 331-344, 2009, DOI:10.3970/fdmp.2009.005.331
Abstract A combined numerical and experimental investigation has been undertaken to explore the benefits of an applied static magnetic field on Silicon transport into a Germanium melt. This work utilized a similar material configuration to that used in the Liquid Phase Diffusion (LPD) and Melt-Replenishment Czochralski (Cz) growth systems.
The measured concentration profiles from the samples processed with and without the application of magnetic field showed very similar shape. The amount of silicon transport into the melt is slightly higher in the samples processed under magnetic field, and there is a substantial difference in dissolution interface shape indicating a change in… More >
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