Yi Yang*, Robert A. Nawrocki, Richard M. Voyles, Haiyan H. Zhang
CMC-Computers, Materials & Continua, Vol.69, No.1, pp. 237-266, 2021, DOI:10.32604/cmc.2021.017439
Abstract Because charge carriers of many organic semiconductors (OSCs) exhibit fractional drift diffusion (Fr-DD) transport properties, the need to develop a Fr-DD model solver becomes more apparent. However, the current research on solving the governing equations of the Fr-DD model is practically nonexistent. In this paper, an iterative solver with high precision is developed to solve both the transient and steady-state Fr-DD model for organic semiconductor devices. The Fr-DD model is composed of two fractional-order carriers (i.e., electrons and holes) continuity equations coupled with Poisson’s equation. By treating the current density as constants within each pair of consecutive grid nodes, a… More >
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