Shahzaib Anwar1, Sardar Muhammad Gulfam1,*, Bilal Muhammad2, Syed Junaid Nawaz1, Khursheed Aurangzeb3, Mohammad Kaleem1
CMC-Computers, Materials & Continua, Vol.69, No.1, pp. 1021-1037, 2021, DOI:10.32604/cmc.2021.018248
Abstract High electron mobility transistor (HEMT) based on gallium nitride (GaN) is one of the most promising candidates for the future generation of high frequencies and high-power electronic applications. This research work aims at designing and characterization of enhancement-mode or normally-off GaN HEMT. The impact of variations in gate length, mole concentration, barrier variations and other important design parameters on the performance of normally-off GaN HEMT is thoroughly investigated. An increase in the gate length causes a decrease in the drain current and transconductance, while an increase in drain current and transconductance can be achieved by increasing the concentration of aluminium… More >
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