Yi Yang, Robert Nawrocki, Richard Voyles, Haiyan H. Zhang*
CMES-Computer Modeling in Engineering & Sciences, Vol.125, No.2, pp. 515-539, 2020, DOI:10.32604/cmes.2020.010165
Abstract Equipped with a two-dimensional topological structure, a group
of masses, springs and dampers can be demonstrated to model the internal
dynamics of a thin-film transistor (TFT). In this paper, the two-dimensional
Mass-Spring-Damper (MSD) representation of an inverted staggered TFT
is proposed to explore the TFT’s internal stress/strain distributions, and the
stress-induced effects on TFT’s electrical characteristics. The 2D MSD model
is composed of a finite but massive number of interconnected cellular units.
The parameters, such as mass, stiffness, and damping ratios, of each cellular
unit are approximated from constitutive equations of the composite materials,
while the electrical properties of the… More >
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