M. Zanib^a, M. A. Yasir^a, N. A. Noor^a,*, S. Mumtaz^b, Mohammad K. Al-Sadoon^c

Chalcogenide Letters, Vol.21, No.9, pp. 695-705, 2024, DOI:10.15251/CL.2024.219.695

Abstract DFT approach was employed to examine the mechanical and optoelectronic properties of CdCe₂X₄ (X = S, Se) for investigating their fundamental attributes leading to the FM semiconducting capabilities. In this letter, we computed the precise spin-polarized electrical characteristics using mBJ potential and evaluated the physical and mechanical features via PBEsol-GGA functional. The materials' brittleness has been disclosed by the obtained elastic parameters and related components. According to the analysis of band structure configuration and density of states plots, the aforementioned composites are accounted to be the most durable. In the FM phase, these compounds’ durability is… More >

J. Kumari^a, C. Singh^b, R. Agrawal^c, B. L. Choudhary^a, A. S. Verma^d,e,*

Chalcogenide Letters, Vol.20, No.1, pp. 73-83, 2023, DOI:10.15251/CL.2023.201.73

Abstract Herein, we have inquired the structural, electronic and thermoelectric properties of the couple of chalcopyrite structured solids LiAlX₂ (X=S and Se) with the help of density functional theory (DFT), which is tracked by resolution of the Boltzmann transport equation with the constant relaxation time calculations. The LDA (Localized Density Approximation), PBE (Perdew-Burke-Ernzerhof), PBEsol (PBE functional revised for solids) and WC (Wu-Cohen) exchange correlation potentials have been used. The calculated lattice constants a = 5.271 Å; c = 10.178 Å and a = 6.226 Å; c = 12.165 Å for LiAlS₂ and LiAlSe₂ respectively and the band gap… More >

C. Arun Prasath^1,*, C. Gowri Shankar²

Intelligent Automation & Soft Computing, Vol.35, No.2, pp. 1767-1781, 2023, DOI:10.32604/iasc.2023.028758 - 19 July 2022

Abstract Leakage power and propagation delay are two significant issues found in sub-micron technology-based Complementary Metal-Oxide-Semiconductor (CMOS)-based Very Large-Scale Integration (VLSI) circuit designs. Positive Channel Metal Oxide Semiconductor (PMOS) has been replaced by Negative Channel Metal Oxide Semiconductor (NMOS) in recent years, with low dimension-switching changes in order to shape the mirror of voltage comparator. NMOS is used to reduce stacking leakage as well as total exchange. Domino Logic Circuit is a powerful and versatile digital programmer that gained popularity in recent years. In this study regarding Adaptive Sub Threshold Voltage Level Control Problem, the researchers… More >