Jun Yin1,*, Jidong Li1
The International Conference on Computational & Experimental Engineering and Sciences, Vol.27, No.2, pp. 1-2, 2023, DOI:10.32604/icces.2023.09679
Abstract External photo-stimuli on heterojunctions commonly induce an electric potential gradient across the
interface therein, such as photovoltaic effect, giving rise to various present-day technical devices. In contrast,
in-plane potential gradient along the interface has been rarely observed. Here we show that moving a light
beam at the semiconductor-water interface, i.e. creating a moving boundary of electrical double layers
between the illuminated and dark regions, induce a potential gradient along the semiconductor. It is
attributed to the following movement of a charge packet in the vicinity of the silicon surface, whose
formation is driven by a built-in electrical field associated with… More >
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