Zhenjun Zhu, Chang Liu¹

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 11-20, 2000, DOI:10.3970/cmes.2000.001.011

Abstract We present results on the development of an anisotropic crystalline etching simulation (ACES) program based on a new continuous Cellular Automata (CA) model, which provides improved spatial resolution and accuracy compared with the conventional and the stochastic CA \mbox{methods}. Implementation of a dynamic CA technique provides increased simulation speed and reduced memory requirement (5x). A first ACES software based on common personal computer platforms has been realized. Simulated results of etching match well with experiments. We have developed a new methodology to obtain the etch-rate diagram of anisotropic etching efficiently using both experimental and numerical techniques. More >

Philippe Matagne¹, Jean-Pierre Leburton², Jacques Destine, Guy Cantraine³

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 1-10, 2000, DOI:10.3970/cmes.2000.001.001

Abstract We investigate the quantum mechanical properties and single-electron charging effects in vertical semiconductor quantum dots by solving the Schrödinger and Poisson (SP) equations, self-consistently. We use the finite element method (FEM), specifically the Bubnov-Galerkin technique to discretize the SP equations. Owing to the cylindrical symmetry of the structure, the mesh is generated from hexahedral volume elements. The fine details of the electron spectrum and wavefunctions in the quantum dot are obtained as a function of macroscopic parameters such as the gate voltage, device geometry and doping level. The simulations provide comprehensive data for the analysis of the experimental data of… More >